Power systems for multi-orbit spacecraft (LEO, GEO, IGSO, and deep space exploration).
Our 32% conversion efficiency solar cell is a next-generation upgrade over the mainstream 30% design. It employs metamorphic epitaxial growth utilizing high-precision MOCVD equipment. A strain-graded buffer layer enables low-dislocation InGaAs and GaInP subcells, while a novel wide-bandgap metamorphic tunnel junction provides an optimized bandgap configuration. These innovations deliver higher short-circuit current density and a record AM0 conversion efficiency of up to 33%.
Electrical Performance (@AM0, 135.3 mW/cm², 25°C, bare cell)
Parameter | Unit | 100 mm (40mm×60mm) | 100 mm (40mm×80mm) |
Effmp | % | 32.25 | 32.23 |
Voc | mV | 2680 | 2680 |
Jsc | mA/cm² | 19.02 | 19.00 |
Vmp | mV | 2340 | 2340 |
Jmp | mA/cm² | 18.56 | 18.54 |
Post Irradiation Performance (1 MeV electron fluence, e⁻/cm²)
Parameter | Radiation Intensity:1E+14 | Radiation Intensity:1E+15 |
Effmp [%] | 29.8 | 27.1 |
Vmp/Vmp,o | 0.92 | 0.87 |
Jmp/Jmp,o | 1.00 | 0.96 |
Pmp/Pmp,o | 0.92 | 0.84 |