Power systems for multi-orbit spacecraft (LEO, GEO, and IGSO).
Our 30% space solar cell adopts a GaInP/Ga(In)As/Ge triple-junction structure. High-quality lattice-matched epitaxy with a bandgap combination of three optical materials enables efficient use of the solar spectrum. It achieves a conversion efficiency up to 31.8%, nearly double that of standard silicon cells in space environments. GaAs-based materials provide superior radiation resistance, ensuring stable performance throughout long-duration space missions.
Electrical Performance (@AM0, 135.3 mW/cm², 25°C, bare cell)
Parameter | Unit | Value (Active Area:77.26 cm²) |
Effmp | % | 30.40 |
Voc | mV | 2760 |
Jsc | mA/cm² | 17.66 |
Vmp | mV | 2420 |
Jmp | mA/cm² | 16.96 |
Post Irradiation Performance (1 MeV electron fluence, e⁻/cm²)
Parameter | Radiation Intensity:1E+14 | Radiation Intensity:1E+15 |
Effmp [%] | 27.9 | 25.8 |
Vmp/Vmp,o | 0.93 | 0.90 |
Jmp/Jmp,o | 0.99 | 0.96 |
Pmp/Pmp,o | 0.92 | 0.85 |