Power systems for multi-orbit spacecraft (LEO, GEO, and IGSO).
Our 30% space solar cell adopts a GaInP/Ga(In)As/Ge triple-junction structure. High-quality lattice-matched epitaxy with a bandgap combination of three optical materials enables efficient use of the solar spectrum. It achieves a conversion efficiency up to 31.8%, nearly double that of standard silicon cells in space environments. GaAs-based materials provide superior radiation resistance, ensuring stable performance throughout long-duration space missions.
Electrical Performance (@AM0, 135.3 mW/cm², 25°C, bare cell)
Parameter | Unit | Value (40mm×60mm) | Value (40mm×80mm) |
Effmp | % | 30.48 | 30.53 |
Voc | mV | 2753 | 2750 |
Jsc | mA/cm² | 17.54 | 17.62 |
Vmp | mV | 2430 | 2430 |
Jmp | mA/cm² | 17.04 | 17.06 |
Post Irradiation Performance (1 MeV electron fluence, e⁻/cm²)
Parameter | Value (Radiation Intensity:1E+14) | Value (Radiation Intensity:1E+15) |
Effmp [%] | 27.9 | 25.9 |
Vmp/Vmp,o | 0.94 | 0.90 |
Jmp/Jmp,o | 1.00 | 0.96 |
Pmp/Pmp,o | 0.92 | 0.85 |